DRAM MODIL

Twouve nan 2008, konpayi gwoup nou an te nan zòn OEM flash memwa prèske 15 ane, OEM DRAM Modil, OEM SSD, OEM USB FLASH DRIVE, OEM TF KAT, kòm yon founisè pwofesyonèl OEM flash memwa, Nou konsantre nan ofri sèvis nan gwo kliyan mak. , komèsan prensipal ak distribitè peyi. Pou pi byen sipòte komèsan ak distribitè peyi yo, nou gen machandiz regilye pare tou de nan Hong Kong ak Shenzhen, nou vann plis pase 1 milyon pcs chak mwa.

Voye rechèch

Nou sitou sipòte DDR3, DDR4 pou kliyan ki tou fè biznis SSD, nan kliyan mak oswa faktori òdinatè, nou menm tou nou gen LPDDR ki kounye a sèlman sipòte Lachin Inland gwo telefòn mobil ak kliyan IPAD ak kèk kliyan gade entelijan. Avèk pèfòmans segondè li yo ak pi ba konsomasyon, li bon pou ti aparèy entelijan gwosè.

Dram/LPDDR paramèt teknik:

KATEGORI PWODWI	SPESIFIKASYON / MAX DONE POUSMAN	DANSITE	PAKÈ	Opere TANPERATI
DRAM	DRAM D3	2Gb / 4Gb	FBGA 96 boul	25 degre ~ 85 degre
DRAM	DRAM D4	4Gb / 8Gb	FBGA 96 boul
Modil DRAM	U-DIMM	4GB / 8GB / 16GB / 32GB	/	0 degre - 85 degre
	SO-DIMM
	R-DIMM	8GB/16GB/32GB	/	0 degre - 85 degre
LPDDR	LP DDR4	2GB / 3GB / 4GB / 6GB / 8GB	200boul	0 degre - 70 degre

Espesifikasyon:

Modèl pwodwi No.	Spesifikasyon	Dansite	Dimansyon	Pake
DRAM U-DIMM /SO-DIMM	8GB X8/X16 1.2V * 2666/2933/3200Mbps	8GB	7.5 x 13.3mm (W x L)	78Boul/96Boul
DRAM U-DIMM /SOD-IMM	16GB X8/X16 1.2V * 2666/2933/3200Mbps	16GB	10.3 x 11mm (W x L)	78Boul/96Boul
DRAM U-DIMM /SO-DIMM	32GB X8/X16 1.2V * 2666/2933/3200Mbps	32GB	10.3 x 11mm (W x L)	78Boul/96Boul

Modil ki disponib:

Nimewo Pati 1)	Dansite	Òganizasyon	Konpozisyon konpozan	Nimewo nan Ranje	Wotè
UDIMM 4GB	4GB	512Mx64	512Mx16 * 4	1	31.25 mm
8GB UDIMM	8GB	1Gx64	1Gx8 * 8	1	31.25 mm
16GB UDIMM	16GB	2Gx64	1Gx8 * 16	2	31.25 mm
4GB SODIMM	4GB	512Mx64	512Mx16 * 4	1	30 mm
8GB SODIMM	8GB	1Gx64	1Gx8 * 8	1	30 mm
16GB SODIMM	16GB	2Gx64	1Gx8 * 16	2	30 mm

REMAK:

1) (2133Mbps 15-15-15) / (2400Mbps 17-17-17) / (2666Mbps 19-19-19) / (3200Mbps 22-22-22) / (3200 Mbps 16-18-18) - DDR{ {12}}(3200Mbps 16-18-18) konpatib pou pi ba frekans.

Karakteristik KLE

Vitès	DDR4-2133	DDR4-2400	DDR4-2666	DDR4-3200	DDR4-3200	DDR4-3200	Inite
Vitès	15-15-15	17-17-17	19-19-19	22-22-22	19-19-19	16-18-18	Inite
tCK (min)	0.938	0.833	0.75	0.625	0.625	0.625	ns
Latansi CAS	15	17	19	22	19	16	nCK
tRCD(min)	14.06	14.16	14.25	13.75	11.875	11.25	ns
tRP (min)	14.06	14.16	14.25	13.75	11.875	11.25	ns
tRAS(min)	33	32	32	32.5	30.0	22.5	ns
tRC(min)	47.06	46.16	46.25	46.25	41.875	33.75	ns

●JEDEC estanda 1.2V ± 0.06V Power Supply

●V_DDQ= 1.2V ± 0.06 V

●1067MHz f_CKpou 2133Mb/sec/pin, 1200MHz f_CKpou 2400Mb/sec/PIN 1333MHz fCK pou 2666Mb/sec/PIN, 1600MHz fCK pou 3200Mb/sec/PIN

●16 Bank (4 gwoup Bank)

●Programmable CAS Latansi: 10,11,12,13,14,15,16,17,18,19,20,21, 22

●Latansi aditif pwogramab (CAS ki afiche): 0, CL - 2, oswa CL - 1 revèy

●Latansi Ekri CAS Programmable (CWL)=11,14 (DDR4-2133), 12,16 (DDR4-2400) ak 14,18 (DDR4- 2666) • Longè pete : 8, 4 ak tCCD=4 ki pa pèmèt li oswa ekri san pwoblèm [swa Sou vole lè l sèvi avèk A12 oswa MRS]

●Bi-direksyon Diferans Done Strobe

●On revokasyon mouri lè l sèvi avèk ODT PIN

●Mwayèn Peryòd rafrechisman 7.8us nan pi ba apre TCASE 85C, 3.9us nan 85C < TCASE  95C

●Asynchrone Reyajiste

DYAGRAM BÒK FONKSYON POU:

4GB, 512M x 64Modil (Peple kòm 1rank nan x16DDR4 SDRAMs)

REMAK :

1) Sòf si yo note otreman, valè rezistans yo se 150Ω 5 pousan.

2) ZQ rezistans yo se 2400Ω 1 pousan. Pou tout lòt valè rezistans, al gade nan dyagram fil elektrik ki apwopriye a.

8GB,1Gx64Module (Peple kòm 1rank nan x 8DDR4 SDRAMs)

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